Lakehead University, Canada
👨🎓Profiles
🎓 Academic and Professional Background
Prof. Dimiter Alexandrov earned his Ph.D. in semiconductors from the Technical University of Sofia, where his research focused on the electron band structures of semiconductors. He began his academic career as an Assistant Professor at the Technical University of Sofia before joining Lakehead University, Canada, as an Associate Professor. In 2011, he was promoted to Full Professor. His expertise spans low energy nuclear fusion reactions and nitride semiconductors, contributing significantly to both theoretical and experimental advancements.
🔬 Research and Innovations
Prof. Alexandrov has been actively involved in groundbreaking research in the following areas: Low Energy Nuclear Fusion Reactions – Experimentation and theoretical development. Semiconductor Technology and Theory – Innovations in nitride semiconductors.
📊 Research Contributions
Prof. Dimiter Alexandrov has actively contributed to the advancement of semiconductor technology and nuclear fusion research through his extensive research and industry collaborations. He has successfully completed or is currently involved in eight research projects, reflecting his dedication to pioneering scientific exploration. His work has gained 215 citations, demonstrating its impact within the academic and research communities. In addition to his scholarly contributions, Prof. Alexandrov has undertaken two industry consultancy projects, bridging the gap between theoretical research and practical applications. His two patents, currently published or under process, further highlight his innovative contributions to semiconductor technology. With 52 publications in prestigious journals indexed in SCI and Scopus, he has made significant contributions to scientific literature. His expertise has also been recognized through an editorial appointment, reinforcing his role in shaping research directions in his field. Furthermore, he actively engages in international collaborations, including Erasmus partnerships and industrial collaborations, fostering global advancements in semiconductor and nuclear fusion research.
🏆 Scientific Contributions and Breakthroughs
Prof. Alexandrov’s work has led to three major scientific breakthroughs: Low Energy Nuclear Fusion – He was the first to achieve replicable low-energy nuclear fusion reactions, producing a significant energy release correlated with helium emission. Semiconductor Innovations – He successfully developed epitaxial layers of GaN on ceramic substrates and achieved epitaxial layers of InN with a 1.9 eV energy band gap, marking a significant milestone in semiconductor technology. Discovery of Optical Effects in Disordered Semiconductors – He identified two critical effects: tunnel optical absorption and exciton formation in disordered semiconductor structures.
🤝 Professional Memberships
Prof. Alexandrov is an active member of several prestigious organizations:
- Professional Engineers Ontario
- Canadian Nuclear Society
- Fusion Energy Council Canada
- International Society of Condensed Matter Nuclear Science
🌍 Impact and Future Contributions
With his pioneering research in nuclear fusion and semiconductor physics, Prof. Alexandrov continues to shape the future of energy generation and electronic materials. His discoveries in low energy nuclear fusion could revolutionize clean energy solutions, while his semiconductor innovations contribute to next-generation electronics and optoelectronic devices.
📖Notable Publications
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Energy Release in Deuterium–Constantan Interactions
- Authors: D. Alexandrov
- Journal: Energies
- Year: 2025
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Artificial Intelligence in the Controlled Nuclear Fusion Reactions
- Authors: D. Alexandrov
- Journal: [No source information available]
- Year: [Not specified]
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Piezoelectric Elements with PVDF–TrFE/MWCNT-Aligned Composite Nanowires for Energy Harvesting Applications
- Authors: M.P. Aleksandrova, T.D. Tsanev, B. Kadikoff, K.I. Nedelchev, I. Kralov
- Journal: Crystals
- Year: 2023
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Structure and Bandgap Determination of InN Grown by RP-MOCVD
- Authors: R. Dubreuil, J. Tot, M. Nagorski, A. Moewes, D. Alexandrov
- Journal: Journal of Materials Science: Materials in Electronics
- Year: 2022