Mr. Yong Jyun Wang | Materials Chemistry | Best Researcher Award
National Tsing Hua University, Taiwan
Profiles
Early Academic Pursuits
Mr. Yong Jyun Wang embarked on his academic journey in the field of Materials Science, and he is currently a Ph.D. candidate at the Department of Materials Science and Engineering, National Tsing Hua University, Taiwan, expecting to graduate in 2025. His early academic foundation laid the groundwork for his deep engagement in the synthesis and property analysis of advanced functional materials, particularly focusing on oxide thin films.
Professional Endeavors
Throughout his doctoral studies, Mr. Wang has actively participated in significant national research projects, including the MOST-113-2639-M-007-001–ASP, which centers on the development and future application of high-entropy epitaxial films. He has gained valuable experience in cutting-edge material fabrication techniques, with an emphasis on physical vapor deposition (PVD). His professional training is complemented by collaborative efforts within interdisciplinary research teams aiming to push the boundaries of electronic material design.
Contributions and Research Focus
Mr. Wang’s primary research has revolved around two-dimensional bismuth oxychalcogenides, particularly Bi₂O₂Se, targeting its integration into next-generation electronic and memory devices. Through compositional engineering and non-volatile modulation techniques, he has pioneered the development of p-type Bi₂O₂Se with high mobility, making it feasible for integration with its native n-type counterpart. This paves the way for complementary circuits, enhancing the material’s potential in versatile electronic systems. Furthermore, his innovative approach to non-volatile control enables memory functionalities, expanding the application horizon of Bi₂O₂Se in advanced backend electronics.
Impact and Influence
Despite being at an early stage in his career, Mr. Wang has already made notable contributions to the materials science community. His work has been featured in prestigious journals such as Nature Communications and Advanced Materials, indicating strong recognition from the academic community. His insights into high-mobility semiconducting materials have opened new research avenues for low-power electronics and neuromorphic computing.
Technical Skills
Mr. Wang is proficient in advanced thin-film fabrication methods, especially physical vapor deposition, and skilled in material characterization techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and electrical transport measurements. His technical versatility allows for comprehensive investigations into both structural and electronic properties of novel materials.
Teaching Experience
While pursuing his Ph.D., Mr. Wang has actively mentored undergraduate and junior graduate students, assisting them in lab training and project supervision. His role as a peer mentor has not only contributed to the academic growth of his colleagues but also strengthened his capabilities in scientific communication and leadership.
Legacy and Future Contributions
Mr. Wang’s work on Bi₂O₂Se has established a strong foundation for complementary logic and memory device platforms, essential for the advancement of low-dimensional nanoelectronics. Looking ahead, he aspires to continue his research into functional oxide materials, explore heterogeneous integration, and contribute to the development of energy-efficient and intelligent device systems. His vision includes bridging fundamental material science with practical applications in flexible electronics, smart sensors, and neuromorphic systems.
Notable Publications
ZrO₂-HfO₂ Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability
Authors: Y.K. Liang, W.L. Li, Y.J. Wang, L.C. Peng, C.C. Lu, H.Y. Huang, S.H. Yeong, …
Journal: IEEE Electron Device Letters
Year: 2022
Electric-field control of the nucleation and motion of isolated three-fold polar vertices
Authors: M. Li, T. Yang, P. Chen, Y. Wang, R. Zhu, X. Li, R. Shi, H.J. Liu, Y.L. Huang, …
Journal: Nature Communications
Year: 2022
High entropy nonlinear dielectrics with superior thermally stable performance
Authors: Y.J. Wang, H.C. Lai, Y.A. Chen, R. Huang, T. Hsin, H.J. Liu, R. Zhu, P. Gao, C. Li, …
Journal: Advanced Materials
Year: 2023
Flexible magnetoelectric complex oxide heterostructures on muscovite for proximity sensor
Authors: Y.J. Wang, J.W. Chen, Y.H. Lai, P.W. Shao, Y. Bitla, Y.C. Chen, Y.H. Chu
Journal: npj Flexible Electronics
Year: 2023
Quasi-static modulation of multiferroic properties in flexible magnetoelectric Cr₂O₃/muscovite heteroepitaxy
Authors: Y.H. Lai, P.W. Shao, C.Y. Kuo, C.E. Liu, Z. Hu, C. Luo, K. Chen, F. Radu, …
Journal: Acta Materialia
Year: 2023
Professional Endeavors
Academic Citations and Recognition
Teaching Experience
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